Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

Ramil A., Singh B., Haber N., Gunes S., Andreev A., Matt G., ...Daha Fazla

JOURNAL OF CRYSTAL GROWTH, cilt.288, sa.1, ss.123-127, 2006 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 288 Sayı: 1
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1016/j.jcrysgro.2005.12.061
  • Dergi Adı: JOURNAL OF CRYSTAL GROWTH
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.123-127
  • Yıldız Teknik Üniversitesi Adresli: Evet

Özet

Hot wall epitaxially grown C-60 based organic field-effect transistors (OFETs) show relatively high electron mobilities of 0.4-1 cm(2)/Vs. We report results of thin film grown with various growth conditions such as preheating and initial substrate temperatures resulting in strikingly different fullerene film nanomorphology. The mobility is enhanced up to 3 cm(2)/Vs for films grown at a substrate temperatures of 130 degrees C. This improvement in the mobility is explained in terms of a transition from a disordered interface consisting of small-elongated grains to a well-ordered C-60 film with bigger and rounder grains. (c) 2005 Elsevier B.V. All rights reserved.