Bajaj, S. Et Al. 2018. High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm. IEEE ELECTRON DEVICE LETTERS , vol.39, no.2 , 256-259.

Bajaj, S., ALLERMAN, A., ARMSTRONG, A., Razzak, T., Talesara, V., Sun, W., ... Sohel, S. H.(2018). High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm. IEEE ELECTRON DEVICE LETTERS , vol.39, no.2, 256-259.

Bajaj, Sanyam Et Al. "High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm," IEEE ELECTRON DEVICE LETTERS , vol.39, no.2, 256-259, 2018

Bajaj, Sanyam Et Al. "High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm." IEEE ELECTRON DEVICE LETTERS , vol.39, no.2, pp.256-259, 2018

Bajaj, S. Et Al. (2018) . "High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm." IEEE ELECTRON DEVICE LETTERS , vol.39, no.2, pp.256-259.

@article{article, author={Sanyam Bajaj Et Al. }, title={High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm}, journal={IEEE ELECTRON DEVICE LETTERS}, year=2018, pages={256-259} }