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Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
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Y. Zhang Et Al. , "Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency," APPLIED PHYSICS LETTERS , vol.112, no.7, 2018

Zhang, Y. Et Al. 2018. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency. APPLIED PHYSICS LETTERS , vol.112, no.7 .

Zhang, Y., Jamal-Eddine, Z., Akyol, F., Bajaj, S., Johnson, J. M., Calderon, G., ... ALLERMAN, A. A.(2018). Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency. APPLIED PHYSICS LETTERS , vol.112, no.7.

Zhang, Yuewei Et Al. "Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency," APPLIED PHYSICS LETTERS , vol.112, no.7, 2018

Zhang, Yuewei Et Al. "Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency." APPLIED PHYSICS LETTERS , vol.112, no.7, 2018

Zhang, Y. Et Al. (2018) . "Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency." APPLIED PHYSICS LETTERS , vol.112, no.7.

@article{article, author={Yuewei Zhang Et Al. }, title={Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency}, journal={APPLIED PHYSICS LETTERS}, year=2018}