NUHOĞLU, Ç. Et Al. 2006. Determination of the characteristic parameters of Sn/n-gaas/Al-Ge Schottky diodes by a barrier height inhomogeneity model. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.3 , 822-828.

NUHOĞLU, Ç., Yıldırım, N., Turut, A., Biber, M., Ayyıldız, E., & Nuhoğlu, Ç., (2006). Determination of the characteristic parameters of Sn/n-gaas/Al-Ge Schottky diodes by a barrier height inhomogeneity model. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.3, 822-828.

NUHOĞLU, Çiğdem Et Al. "Determination of the characteristic parameters of Sn/n-gaas/Al-Ge Schottky diodes by a barrier height inhomogeneity model," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.3, 822-828, 2006

NUHOĞLU, Çiğdem Et Al. "Determination of the characteristic parameters of Sn/n-gaas/Al-Ge Schottky diodes by a barrier height inhomogeneity model." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.3, pp.822-828, 2006

NUHOĞLU, Ç. Et Al. (2006) . "Determination of the characteristic parameters of Sn/n-gaas/Al-Ge Schottky diodes by a barrier height inhomogeneity model." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.3, pp.822-828.

@article{article, author={Çiğdem NUHOĞLU Et Al. }, title={Determination of the characteristic parameters of Sn/n-gaas/Al-Ge Schottky diodes by a barrier height inhomogeneity model}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2006, pages={822-828} }