Akyol, F. Et Al. 2017. Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content. APPLIED PHYSICS EXPRESS , vol.10, no.12 .

Akyol, F., Zhang, Y., Krishnamoorthy, S., & Rajan, S., (2017). Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content. APPLIED PHYSICS EXPRESS , vol.10, no.12.

Akyol, Fatih Et Al. "Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content," APPLIED PHYSICS EXPRESS , vol.10, no.12, 2017

Akyol, Fatih Et Al. "Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content." APPLIED PHYSICS EXPRESS , vol.10, no.12, 2017

Akyol, F. Et Al. (2017) . "Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content." APPLIED PHYSICS EXPRESS , vol.10, no.12.

@article{article, author={Fatih AKYOL Et Al. }, title={Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content}, journal={APPLIED PHYSICS EXPRESS}, year=2017}