SEL, K. Et Al. 2009. Electroluminescence properties of a PIN structure made by nearly stoichiometric a-SiCx:H active layer. VACUUM , vol.83, no.5 , 813-818.

SEL, K., Akaoglu, B., ÖZDEMİR, O., & Atilgan, I., (2009). Electroluminescence properties of a PIN structure made by nearly stoichiometric a-SiCx:H active layer. VACUUM , vol.83, no.5, 813-818.

SEL, KIVANÇ Et Al. "Electroluminescence properties of a PIN structure made by nearly stoichiometric a-SiCx:H active layer," VACUUM , vol.83, no.5, 813-818, 2009

SEL, KIVANÇ Et Al. "Electroluminescence properties of a PIN structure made by nearly stoichiometric a-SiCx:H active layer." VACUUM , vol.83, no.5, pp.813-818, 2009

SEL, K. Et Al. (2009) . "Electroluminescence properties of a PIN structure made by nearly stoichiometric a-SiCx:H active layer." VACUUM , vol.83, no.5, pp.813-818.

@article{article, author={KIVANÇ SEL Et Al. }, title={Electroluminescence properties of a PIN structure made by nearly stoichiometric a-SiCx:H active layer}, journal={VACUUM}, year=2009, pages={813-818} }