Menda, U. D. Et Al. 2010. Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.13, no.4 , 257-266.

Menda, U. D., ÖZDEMİR, O., Tatar, B., Urgen, M., & Kutlu, K., (2010). Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.13, no.4, 257-266.

Menda, Uğur Et Al. "Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.13, no.4, 257-266, 2010

Menda, Uğur D. Et Al. "Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.13, no.4, pp.257-266, 2010

Menda, U. D. Et Al. (2010) . "Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.13, no.4, pp.257-266.

@article{article, author={Uğur Deneb MENDA Et Al. }, title={Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2010, pages={257-266} }