F. AKYOL, "Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors," TURKISH JOURNAL OF PHYSICS , vol.45, no.3, pp.169-177, 2021
AKYOL, F. 2021. Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors. TURKISH JOURNAL OF PHYSICS , vol.45, no.3 , 169-177.
AKYOL, F., (2021). Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors. TURKISH JOURNAL OF PHYSICS , vol.45, no.3, 169-177.
AKYOL, Fatih. "Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors," TURKISH JOURNAL OF PHYSICS , vol.45, no.3, 169-177, 2021
AKYOL, Fatih. "Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors." TURKISH JOURNAL OF PHYSICS , vol.45, no.3, pp.169-177, 2021
AKYOL, F. (2021) . "Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors." TURKISH JOURNAL OF PHYSICS , vol.45, no.3, pp.169-177.
@article{article, author={Fatih AKYOL}, title={Investigating the effect of self-trapped holes in the current gain mechanism of beta-Ga2O3 Schottky diode photodetectors}, journal={TURKISH JOURNAL OF PHYSICS}, year=2021, pages={169-177} }