NUHOĞLU, Ç. 2005. The dependence of I-V and C-V characteristics on temperature in the H-terminated Pb/p-Si(100) Schottky barrier diodes. APPLIED SURFACE SCIENCE , vol.250, no.5 , 203-208.

NUHOĞLU, Ç., (2005). The dependence of I-V and C-V characteristics on temperature in the H-terminated Pb/p-Si(100) Schottky barrier diodes. APPLIED SURFACE SCIENCE , vol.250, no.5, 203-208.

NUHOĞLU, Çiğdem. "The dependence of I-V and C-V characteristics on temperature in the H-terminated Pb/p-Si(100) Schottky barrier diodes," APPLIED SURFACE SCIENCE , vol.250, no.5, 203-208, 2005

NUHOĞLU, Çiğdem. "The dependence of I-V and C-V characteristics on temperature in the H-terminated Pb/p-Si(100) Schottky barrier diodes." APPLIED SURFACE SCIENCE , vol.250, no.5, pp.203-208, 2005

NUHOĞLU, Ç. (2005) . "The dependence of I-V and C-V characteristics on temperature in the H-terminated Pb/p-Si(100) Schottky barrier diodes." APPLIED SURFACE SCIENCE , vol.250, no.5, pp.203-208.

@article{article, author={Çiğdem NUHOĞLU}, title={The dependence of I-V and C-V characteristics on temperature in the H-terminated Pb/p-Si(100) Schottky barrier diodes}, journal={APPLIED SURFACE SCIENCE}, year=2005, pages={203-208} }