BOZKURT, K. Et Al. 2019. Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.52, no.10 .

BOZKURT, K., ÖZDEMİR, O., KURUOGLU, N., ALSHEHRI, B., DOGHECHE, K., Gaimard, Q., ... Ramdane, A.(2019). Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.52, no.10.

BOZKURT, Kutsal Et Al. "Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices," JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.52, no.10, 2019

BOZKURT, Kutsal Et Al. "Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices." JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.52, no.10, 2019

BOZKURT, K. Et Al. (2019) . "Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices." JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.52, no.10.

@article{article, author={Kutsal BOZKURT Et Al. }, title={Impact of trap states on inductive phenomena in 30% InGaN/GaN MOW LED devices}, journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS}, year=2019}