AKYOL, F. 2020. Simulation of beta-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm(2)V(-1)s(-1). JOURNAL OF APPLIED PHYSICS , vol.127, no.7 .

AKYOL, F., (2020). Simulation of beta-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm(2)V(-1)s(-1). JOURNAL OF APPLIED PHYSICS , vol.127, no.7.

AKYOL, Fatih. "Simulation of beta-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm(2)V(-1)s(-1)," JOURNAL OF APPLIED PHYSICS , vol.127, no.7, 2020

AKYOL, Fatih. "Simulation of beta-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm(2)V(-1)s(-1)." JOURNAL OF APPLIED PHYSICS , vol.127, no.7, 2020

AKYOL, F. (2020) . "Simulation of beta-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm(2)V(-1)s(-1)." JOURNAL OF APPLIED PHYSICS , vol.127, no.7.

@article{article, author={Fatih AKYOL}, title={Simulation of beta-Ga2O3 vertical Schottky diode based photodetectors revealing average hole mobility of 20cm(2)V(-1)s(-1)}, journal={JOURNAL OF APPLIED PHYSICS}, year=2020}