Bajaj, S. Et Al. 2016. AlGaN channel field effect transistors with graded heterostructure ohmic contacts. APPLIED PHYSICS LETTERS , vol.109, no.13 .

Bajaj, S., Akyol, F., Krishnamoorthy, S., Zhang, Y., & Rajan, S., (2016). AlGaN channel field effect transistors with graded heterostructure ohmic contacts. APPLIED PHYSICS LETTERS , vol.109, no.13.

Bajaj, Sanyam Et Al. "AlGaN channel field effect transistors with graded heterostructure ohmic contacts," APPLIED PHYSICS LETTERS , vol.109, no.13, 2016

Bajaj, Sanyam Et Al. "AlGaN channel field effect transistors with graded heterostructure ohmic contacts." APPLIED PHYSICS LETTERS , vol.109, no.13, 2016

Bajaj, S. Et Al. (2016) . "AlGaN channel field effect transistors with graded heterostructure ohmic contacts." APPLIED PHYSICS LETTERS , vol.109, no.13.

@article{article, author={Sanyam Bajaj Et Al. }, title={AlGaN channel field effect transistors with graded heterostructure ohmic contacts}, journal={APPLIED PHYSICS LETTERS}, year=2016}