Gönül, B. Et Al. 2010. Band alignment and critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates. E-MRS The European Material Conference , (Strasbourg, France), 1.

Gönül, B., Köksal, K., ODUNCUOĞLU, M., & Bakır, E., (2010). Band alignment and critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates . E-MRS The European Material Conference (pp.1). Strasbourg, France

Gönül, Beşire Et Al. "Band alignment and critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates," E-MRS The European Material Conference, Strasbourg, France, 2010

Gönül, Beşire Et Al. "Band alignment and critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates." E-MRS The European Material Conference , Strasbourg, France, pp.1, 2010

Gönül, B. Et Al. (2010) . "Band alignment and critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates." E-MRS The European Material Conference , Strasbourg, France, p.1.

@conferencepaper{conferencepaper, author={Beşire Gönül Et Al. }, title={Band alignment and critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates}, congress name={E-MRS The European Material Conference}, city={Strasbourg}, country={France}, year={2010}, pages={1} }