KUTLU, K. 2010. Excess Capacitance Due To Minority Carrier Injection in CrSi2/p-c-Si Isotype Junction. Japanese Journal of Applied Physics , no.49 .

KUTLU, K., (2010). Excess Capacitance Due To Minority Carrier Injection in CrSi2/p-c-Si Isotype Junction. Japanese Journal of Applied Physics , no.49.

KUTLU, Kubilay. "Excess Capacitance Due To Minority Carrier Injection in CrSi2/p-c-Si Isotype Junction," Japanese Journal of Applied Physics , no.49, 2010

KUTLU, Kubilay. "Excess Capacitance Due To Minority Carrier Injection in CrSi2/p-c-Si Isotype Junction." Japanese Journal of Applied Physics , no.49, 2010

KUTLU, K. (2010) . "Excess Capacitance Due To Minority Carrier Injection in CrSi2/p-c-Si Isotype Junction." Japanese Journal of Applied Physics , no.49.

@article{article, author={Kubilay KUTLU}, title={Excess Capacitance Due To Minority Carrier Injection in CrSi2/p-c-Si Isotype Junction}, journal={Japanese Journal of Applied Physics}, year=2010}