Koksal, K. Et Al. 2009. Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations. EUROPEAN PHYSICAL JOURNAL B , vol.69, no.2 , 211-218.

Koksal, K., Gonul, B., & Oduncuoglu, M., (2009). Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations. EUROPEAN PHYSICAL JOURNAL B , vol.69, no.2, 211-218.

Koksal, K., B. Gonul, And Murat ODUNCUOĞLU. "Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations," EUROPEAN PHYSICAL JOURNAL B , vol.69, no.2, 211-218, 2009

Koksal, K. Et Al. "Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations." EUROPEAN PHYSICAL JOURNAL B , vol.69, no.2, pp.211-218, 2009

Koksal, K. Gonul, B. And Oduncuoglu, M. (2009) . "Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations." EUROPEAN PHYSICAL JOURNAL B , vol.69, no.2, pp.211-218.

@article{article, author={K. Koksal Et Al. }, title={Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations}, journal={EUROPEAN PHYSICAL JOURNAL B}, year=2009, pages={211-218} }