ÖZDEMİR, O. Et Al. 2010. Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction. JAPANESE JOURNAL OF APPLIED PHYSICS , vol.49, no.9 .

ÖZDEMİR, O., Yilmazer, U. D., Tatar, B., Urgen, M., & Kutlu, K., (2010). Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction. JAPANESE JOURNAL OF APPLIED PHYSICS , vol.49, no.9.

ÖZDEMİR, Orhan Et Al. "Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction," JAPANESE JOURNAL OF APPLIED PHYSICS , vol.49, no.9, 2010

ÖZDEMİR, Orhan Et Al. "Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction." JAPANESE JOURNAL OF APPLIED PHYSICS , vol.49, no.9, 2010

ÖZDEMİR, O. Et Al. (2010) . "Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction." JAPANESE JOURNAL OF APPLIED PHYSICS , vol.49, no.9.

@article{article, author={Orhan ÖZDEMİR Et Al. }, title={Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS}, year=2010}