Bajaj, S. Et Al. 2015. Power Switching Transistors Based on GaN and AlGaN Channels. 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) , (Virginia, United States Of America), 16-20.

Bajaj, S., Hung, T., Akyol, F., Krishnamoorthy, S., Khandaker, S., ARMSTRONG, A., ... ALLERMAN, A.(2015). Power Switching Transistors Based on GaN and AlGaN Channels . 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (pp.16-20). Virginia, United States Of America

Bajaj, Sanyam Et Al. "Power Switching Transistors Based on GaN and AlGaN Channels," 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Virginia, United States Of America, 2015

Bajaj, Sanyam Et Al. "Power Switching Transistors Based on GaN and AlGaN Channels." 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) , Virginia, United States Of America, pp.16-20, 2015

Bajaj, S. Et Al. (2015) . "Power Switching Transistors Based on GaN and AlGaN Channels." 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) , Virginia, United States Of America, pp.16-20.

@conferencepaper{conferencepaper, author={Sanyam Bajaj Et Al. }, title={Power Switching Transistors Based on GaN and AlGaN Channels}, congress name={3rd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)}, city={Virginia}, country={United States Of America}, year={2015}, pages={16-20} }