CHAO, C. Et Al. 2004. High-field grain boundary transport in semiconducting BaTiO3 ceramics. JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.37, no.3 , 416-421.

CHAO, C., CANN, D., GALL, R., & Palaci, Y., (2004). High-field grain boundary transport in semiconducting BaTiO3 ceramics. JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.37, no.3, 416-421.

CHAO, CT Et Al. "High-field grain boundary transport in semiconducting BaTiO3 ceramics," JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.37, no.3, 416-421, 2004

CHAO, CT Et Al. "High-field grain boundary transport in semiconducting BaTiO3 ceramics." JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.37, no.3, pp.416-421, 2004

CHAO, C. Et Al. (2004) . "High-field grain boundary transport in semiconducting BaTiO3 ceramics." JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.37, no.3, pp.416-421.

@article{article, author={CT CHAO Et Al. }, title={High-field grain boundary transport in semiconducting BaTiO3 ceramics}, journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS}, year=2004, pages={416-421} }