Al/Al2O3/CdS MIS yapısının yapısal ve elektriksel özelliklerinin incelenmesi

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Thesis Type: Postgraduate

Institution Of The Thesis: Yildiz Technical University, Graduate School of Natural and Applied Sciences, -, Turkey

Approval Date: 2013

Thesis Language: Turkish

Student: Muzaffer MOĞULKOÇ

Principal Supervisor (For Co-Supervisor Theses): Merih Serin

Co-Supervisor: Murat Çalışkan

Open Archive Collection: AVESIS Open Access Collection

Abstract:

In this study, current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Al/Al2O3/CdS MIS Schottky diodes prepared with different oxide thickness have been investigated over voltage range of ±5V. From the evaluation of the experimental measurements, ideality factor (n), barrier height (?B), series resistance (Rs), carrier density (NA) and interfacial state density (Nss) were calculated. When Rs and ?B values decrease with increasing temperature, the n increases with increasing temperature and significant changes were not observed in the examined temperature range for Nss and NA. Examination of humidity sensing property of diode, I-V measurements were done in humidity atmosphere. The resistance of diode decreased with the effect of humidity. Therefore, it was understood that the diode was suitable for the sensor applications.