Temperature Dependence of PECVD Grown Boron Nitride Film in MIS structure | AVESİS

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Temperature Dependence of PECVD Grown Boron Nitride Film in MIS structure

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American Institute of Physics Conference Proceedings, vol.1203, pp.870-875, 2009 (SCI-Expanded)

Publication Type: Article / Article
Volume: 1203
Publication Date: 2009
Journal Name: American Institute of Physics Conference Proceedings
Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED)
Page Numbers: pp.870-875
Yıldız Technical University Affiliated: Yes