Influence of indium on the parameters of ZnS thin films and ZnS/CuInS2 cells

Serkis Yesilkaya S. S., Ulutas U.

Materials Letters, vol.315, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 315
  • Publication Date: 2022
  • Doi Number: 10.1016/j.matlet.2022.131959
  • Journal Name: Materials Letters
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: CuInS2, ZnS, In doping, Semiconductors, Thin films, OPTICAL-PROPERTIES, SPRAY-PYROLYSIS
  • Yıldız Technical University Affiliated: Yes


© 2022 Elsevier B.V.ZnS/CuInS2 heterostructure cells fabricated by chemical spray pyrolysis technique with undoped and 5 to 20% indium doped ZnS layer. Effect of In doping on the parameters of ZnS thin films and ZnS/CuInS2 cells were investigated. Band gap energy of ZnS film was decreased to 3.26 eV from 3.66 eV and resistivity of the film was decreased to 1.80 × 105 Ω.cm from 5.20 × 105 Ω.cm with increasing In doping concentration. Photovoltaic performance of ZnS/CuInS2 heterostructure cell was improved and power conversion efficiency was increased to 6.02% from 3.90% as a result of increased Voc, Jsc and FF.