Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity
IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.64, sa.8, ss.3114-3119, 2017 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 64 Sayı: 8
- Basım Tarihi: 2017
- Doi Numarası: 10.1109/ted.2017.2713784
- Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.3114-3119
- Anahtar Kelimeler: Graded AlGaN, constant f(T), gain linearity, GaN, graded AlGaN, high-electron-mobility transistor (HEMT), polarization-doped field-effect transistor (PolFET), ELECTRON-MOBILITY TRANSISTORS, MOLECULAR-BEAM EPITAXY, OHMIC CONTACTS, HEMTS, F(T)
- Yıldız Teknik Üniversitesi Adresli: Hayır
Özet
We report on the small-signal high frequency characteristics of highly scaled graded AlGaN channel polarization-doped field-effect transistors (PolFETs) that show constant current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) profiles as a function of current density or gate bias. The device design includes upward and downward Al composition grading to induce a distributed 3-D charge profile, and eliminate abrupt heterojunction band offsets to achieve nonalloyedohmic contacts with low resistance. The highest extrinsic f(T) of 52 GHz and fmax of 67 GHz weremeasured at V-GS = -1.5 V andVDS = 9 V, and constant fT and fmax over wide input voltage (VGS) and output current range (IDS) were achieved.