Gallium Nitride–Based Interband Tunnel Junctions


AKYOL F.

in: Gallium Nitride (GaN) Physics, Devices, and Technology, Farid Medjdoub, Editor, Crc Press, Florida, Boca Raton, pp.299-326, 2017

  • Publication Type: Book Chapter / Chapter Research Book
  • Publication Date: 2017
  • Publisher: Crc Press
  • City: Florida, Boca Raton
  • Page Numbers: pp.299-326
  • Editors: Farid Medjdoub, Editor