An experimental study on the linear differential scattering coefficients of the GaAs, n- and p-type Si


Icelli O. , Cankaya G., Cetin A.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol.605, no.3, pp.359-363, 2009 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 605 Issue: 3
  • Publication Date: 2009
  • Doi Number: 10.1016/j.nima.2009.04.005
  • Title of Journal : NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  • Page Numbers: pp.359-363

Abstract

The linear differential scattering coefficients at 60 keV have been measured for GaAs, p-Si and n-Si semiconductors at seven angles ranging from 60 degrees to 120 degrees at intervals of 10 degrees. The results have been compared with relativistic and non-relativistic theoretical values. The objective of this work is to seek evidence whether there is a relationship between the LDSC and the scattering angle. The LDSCs have been measured with energy-dispersive X-ray fluorescence spectroscopy (EDXRF) for wafers as GaAs, n- and p-type Si. This is the first time the LDSCs have been measured at < 100 keV energies, so there is no comparable findings reported in the literature. (C) 2009 Elsevier B.V. All rights reserved.