Akademik Veri Yönetim Sistemi
MRS 2019 Fall, Massachusetts, Amerika Birleşik Devletleri, 1 - 06 Aralık 2019, ss.1907
In recent years Cu-based chalcogenide Cu2ZnSnS4
(CZTS) has attracted a lot of attention as an earth-abudant alternative
for CIGS solar cells. To date, the research in this field has been
focused on solar cell applications. However, the efficiency of CZTS
solar cells has not experienced a real improvement in the past five
years. Therefore, research is beginning to explore new applications for
this material such as sensors, water-splitting and charge-extraction
layers. In this project, aluminium doping has been introduced to CZTS
thin-films for the first time. CZTS films were deposited in atmospheric
conditions via a low-cost and environmentally friendly solution-based
method. The effects of up to 3 % Al doping in a range of different
annealing temperatures from 350 °C to 550 °C without any
sulfurization/selenization were examined. Our results show that Al has
no significant effect for the samples heat-treated at 350 °C. On the
other hand, we observed successful doping for the samples heat-treated
above 450 °C. Our EDS, XRD and Raman results suggest that Al is
replacing Sn sites in these samples. The Al doping caused a drop in
resistivity while increasing the charge-carrier concentration, bandgap
and grain sizes. The biggest reduction in resistivity was observed for
2% doped and heat-treated at 450 °C samples. In these samples the
resistivity reduced from 13.34 Ω.cm to 0.42 Ω.cm while charge-carrier
concentration increased from 7.85×1017 to 1.74×1020 cm-3.
Such improvement in charge-carrier concentration is promising for using
Al-doped CZTS thin-films as hole transport layers in Perovskite solar
cells, while an increase in the bandgap is advantageous for
water-splitting applications.