Solution-processed n-type organic field-effect transistors (OFETs) have been fabricated using soluble derivatives of perylene diimide and naphthalene diimide. We report the synthesis of the organic semiconductors and the fabrication of bottom gate OFET devices using solution-processed organic dielectrics. Surface morphology studies reveal films with layered textures and liquid crystalline-like structure. Devices show field-effect electron mobilities of 10(-2) cm(2)/V s and 10(-3) cm(2)/V s for N,N'-bis-n-butyl-1,4,5,8-naphthalenediimide-NDI under inert conditions and in air, respectively. N,N'-bis-(1-pentyl)hexyl-3,4,9,10-perylene diimide-PDI-4 shows mobility of 5 x 10(-4) cm(2)/V s. Organic field-effect transistors based on N,N'-bis(dehydroabietyl)-3,4,9,10-perylene diimide-PDI-1 derivative exhibit ambipolar transport. (c) 2006 Elsevier B.V. All rights reserved.