A theoretical comparison of the 1.3 mu m doped InxGa1-xNyAs1-y/GaAs quantum well lasers for different x/y concentrations

Oduncuoglu M. , GONUL B.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, vol.27, pp.253-261, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 27
  • Publication Date: 2005
  • Doi Number: 10.1016/j.physe.2004.11.016
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.253-261


A comparative study of the InxGa1-xNyAs1-y/GaAs quantum wells (QWs) for 1.3 mu m laser emission with different x/y concentrations, has been undertaken, for the first time, involving gain characteristics with doping. By considering different x/y concentrations, we present the influence of doping on transparency carrier density, gain properties and spontaneous emission factor of 1.3 mu m InxGa1-xNyAs1-y/GaAs-strained QWs and compare with an equivalent nitrogen-free 1.3 mu m InxGa1-xAs/GaAs laser structure. This study provides useful information for the optimazition of doped InxGa1-xNyAs1-y/GaAs on the basis of 1.3 mu m emission wavelength. (c) 2005 Elsevier B.V. All rights reserved.