A theoretical comparison of the 1.3 mu m doped InxGa1-xNyAs1-y/GaAs quantum well lasers for different x/y concentrations

Oduncuoglu, Murat; GONUL, B

doi:10.1016/j.physe.2004.11.016

A theoretical comparison of the 1.3 mu m doped InxGa1-xNyAs1-y/GaAs quantum well lasers for different x/y concentrations

Atıf İçin Kopyala

Oduncuoglu M., GONUL B.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.27, ss.253-261, 2005 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 27
Basım Tarihi: 2005
Doi Numarası: 10.1016/j.physe.2004.11.016
Dergi Adı: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.253-261
Yıldız Teknik Üniversitesi Adresli: Hayır

Özet

A comparative study of the InxGa1-xNyAs1-y/GaAs quantum wells (QWs) for 1.3 mu m laser emission with different x/y concentrations, has been undertaken, for the first time, involving gain characteristics with doping. By considering different x/y concentrations, we present the influence of doping on transparency carrier density, gain properties and spontaneous emission factor of 1.3 mu m InxGa1-xNyAs1-y/GaAs-strained QWs and compare with an equivalent nitrogen-free 1.3 mu m InxGa1-xAs/GaAs laser structure. This study provides useful information for the optimazition of doped InxGa1-xNyAs1-y/GaAs on the basis of 1.3 mu m emission wavelength. (c) 2005 Elsevier B.V. All rights reserved.