Akademik Veri Yönetim Sistemi
Circuits, Systems, and Signal Processing, 2025 (SCI-Expanded)
The memtranstor, which directly correlates charge and magnetic flux through nonlinear magnetic effects, is classified as the fourth memory element alongside the memristor, memcapacitor, and meminductor. This represents a highly promising option for the development of nonvolatile devices. This article presents a new emulator design that incorporates a recently introduced memory element namely, the memtranstor in a floating structure. The design employs three operational transconductance amplifiers (OTAs), one dual-output second-generation current conveyor (DO-CCII) and one analog multiplier as active components. Additionally, three grounded capacitors and one grounded resistor are used as passive elements. The proposed floating memtranstor emulator circuit also offers electronic tunability through control of the transconductance parameters (gm) of the OTAs. PSPICE simulation results, based on 0.18 μm CMOS technology parameter, are provided to validate the functionality of the proposed emulator. A variety of simulations are performed, including those demonstrating memory effects, Monte Carlo analyses, temperature variation and pinched hysteresis loop behaviors under varying DC control voltages, transconductance parameters, and frequencies. Furthermore, a memtranstor-based chaotic oscillator circuit was implemented using the proposed emulator and validated through simulations, and additional experiments were carried out using commercially available ICs.