Investigation of Oxygen Diffusion in Irradiated UO2 with MD Simulation


GÜNAY S. D.

HIGH TEMPERATURE MATERIALS AND PROCESSES, cilt.35, ss.981-987, 2016 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 35 Konu: 10
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1515/htmp-2015-0137
  • Dergi Adı: HIGH TEMPERATURE MATERIALS AND PROCESSES
  • Sayfa Sayıları: ss.981-987

Özet

In this study, irradiated UO2 is analyzed by atomistic simulation method to obtain diffusion coefficient of oxygen ions. For this purpose, a couple of molecular dynamics (MD) supercells containing Frenkel, Schottky, vacancy and interstitial types for both anion and cation defects is constructed individually. Each of their contribution is used to calculate the total oxygen diffusion for both intrinsic and extrinsic ranges. The results display that irradiation-induced defects contribute the most to the overall oxygen diffusion at temperatures below 8001,200 K. This result is quite sensible because experimental data shows that, from room temperature to about 1,500 K, irradiation-induced swelling decreases and irradiated UO2 lattice parameter is gradually recovered because defects annihilate each other. Another point is that, concentration of defects enhances the irradiation-induced oxygen diffusion. Irradiation type also has the similar effect, namely oxygen diffusion in crystals irradiated with alpha-particles is more than the crystals irradiated with neutrons. Dynamic Frenkel defects dominate the oxygen diffusion data above 1,500-1,800 K. In all these temperature ranges, thermally induced Frenkel defects make no significant contribution to overall oxygen diffusion.