STUDYING THE EFFECT OF TRANSPORT LAYERS ON ZrS2/MEH-PPV SOLAR CELLS: USING SCAPS-1D SOFTWARE
East European Journal of Physics, cilt.2024, sa.4, ss.419-426, 2024 (ESCI, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 2024 Sayı: 4
- Basım Tarihi: 2024
- Doi Numarası: 10.26565/2312-4334-2024-4-49
- Dergi Adı: East European Journal of Physics
- Derginin Tarandığı İndeksler: Emerging Sources Citation Index (ESCI), Scopus
- Sayfa Sayıları: ss.419-426
- Anahtar Kelimeler: Doping density, Interface Defect, SCAPS simulation, Solar cells, Work function
- Yıldız Teknik Üniversitesi Adresli: Evet
Özet
This study investigates the effect of charge transport layers on the efficiency of Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH_PPV) and Zirconium Disulfide (ZrS₂) solar cells using Scaps-1D software. It was found that by increasing the MEH-PPV thickness and decreasing its acceptor doping concentration, the efficiency (μ%), fill factor (FF), and short-circuit current density (Jsc) decreased. Conversely, increasing the thickness of the ZrS₂ electron transport layer and decreasing its donor doping density enhanced the efficiency (μ%) and short-circuit current density (Jsc) while maintaining a constant open-circuit voltage (Voc). These results can be attributed to decreased charge separation and collection in MEH-PPV and reduced optical path length in ZrS2. On the other hand, the back contact with work function is below 4.65 eV, the MEH-PPV/ZrS2 solar cells produced the lowest efficiency compared to different types of back contact. Under optimal conditions, MEH-PPV/ZrS2 solar cell shows a high efficiency of 21% when the dopant concentration of MEH-PPV and the value of the neutral defect density at the ZrS2/ MEH-PPV interface are 1022 cm-3 and 109 cm-3 respectively.