The effect of high temperature annealing on Schottky diode characteristics of CoCr/n-LEC GaAs contacts


PHYSICA SCRIPTA, vol.65, no.1, pp.124-127, 2002 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 65 Issue: 1
  • Publication Date: 2002
  • Doi Number: 10.1238/physica.regular.065a00124
  • Journal Name: PHYSICA SCRIPTA
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.124-127
  • Yıldız Technical University Affiliated: No


The CoCr/n-GaAs Schottky contacts fabricated were annealed in the temperature range 100 to 300degreesC for 5 min and 350 to 650degreesC for 1 min, to attain reproducible and stable Schottky diodes. The thermal annealing proceeding has been seen to be useful for improving the electrical characteristics of CoCr evaporation on Liquid Encapsulated Czochralski (LEC) GaAs. With use of current voltage (I-V) techniques, the Schottky barrier height Phi(b) and ideality factor n range from 0.85 eV and 1.07 (for as-deposited sample) to 0.90 eV and 1.05 (for 400degreesC annealing) for I min, and 0.82 eV and 1.10 for 550degreesC. The contact properties of the Schottky diodes deteriorated and became nearly ohmic above 750degreesC for 1 min.