Correlation between morphology and ambipolar transport in organic field-effect transistors


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Singh T., GÜNEŞ S. , Marjanovic N., Sariciftci N. S. , Menon R.

JOURNAL OF APPLIED PHYSICS, cilt.97, 2005 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 97 Konu: 11
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1063/1.1929850
  • Dergi Adı: JOURNAL OF APPLIED PHYSICS

Özet

Attaining ambipolar charge transport in organic field-effect transistors (OFET) is highly desirable from both fundamental understanding and application points of view. We present the results of an approach to obtain ambipolar OFET with an active layer of organic semiconductor blends using semiconducting polymers in composite with fullerene derivatives. Clear features of forming the superposition of both hole and electron-enhanced channels for an applied gate field are observed. The present studies suggest a strong correlation of thin-film nanomorphology and ambipolar transport in field-effect devices. (C) 2005 American Institute of Physics.