Enhanced Electrical Properties of P3HT:WO3 Hybrid Thin Film Transistors

Yedikardes B., Ordokhani F., Akkan N., Kurt E., Yavuz N., Zayim E., ...More

JOURNAL OF ELECTRONIC MATERIALS, vol.50, no.4, pp.2466-2475, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 50 Issue: 4
  • Publication Date: 2021
  • Doi Number: 10.1007/s11664-021-08764-4
  • Journal Name: JOURNAL OF ELECTRONIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Compendex, Computer & Applied Sciences, INSPEC
  • Page Numbers: pp.2466-2475
  • Keywords: OFET, organic electronics, organic&#8211, inorganic hybrid thin films, P3HT, WO3
  • Yıldız Technical University Affiliated: Yes

Abstract

In recent decades, conjugated polymers have been widely studied in organic electronics to produce low-cost transistors. Additionally, these polymers are doped with inorganic materials in order to improve the transistor performance in terms of mobility, on/off current ratio, and threshold voltage as well as to ease processability. In this study, we use various doping concentrations (0-50% in weight) of tungsten oxide (WO3) in poly(3-hexylthiophene) (P3HT), a well-studied organic semiconductor, to optimize the transistor performance. We treat spin-coated film of the hybrid P3HT:WO3 solution on hexamethyl disilazane (HMDS) as channels of commercial test chips including 20 transistors with their gold electrodes. Compared to using pristine P3HT, the proposed hybrid P3HT:WO3 formula which significantly improves the transistor performance. Almost 105 times larger mobilities, almost 10 times larger on/off current ratios, and nearly 22 V decrease in threshold voltages were achieved. It was also observed that the excess amount of WO3 doping leads to worse mobilities and on/off current ratios.