8th International Conference on Diffusion in Solids Liquids (DSL 2012), İstanbul, Turkey, 25 - 29 June 2012, vol.334-335, pp.294-295
Irradiation of ZnO:Al thin film by reactor neutrons with neutron/gamma ratio at 1.44x10(4) (n.cm(-2).s(-1).mR(-1)) leads to a decrease in resistivity in this material. The observed effects in electrical resistivity are attributed to irradiation-induced formation of defects in the ZnO:Al thin film structure.