Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers

GONUL B., Oduncuoglu M., DINDAROGLU S., YAGDIRAN B.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.18, no.2, pp.163-169, 2003 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 18 Issue: 2
  • Publication Date: 2003
  • Doi Number: 10.1088/0268-1242/18/2/318
  • Journal Name: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.163-169
  • Yıldız Technical University Affiliated: No

Abstract

We investigate the effect of doping on the parameters of transparency carrier density and peak gain of GaInNAs/GaAs quantum well lasers emitting at 1.3 mum and compare the results with that of an equivalent nitrogen-free InGaAs/GaAs structure. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs contrary to nitrogen-free InGaAs/GaAs. The results are analysed using the band-anti-crossing model for band gap, effective mass and simple approximate expressions for carrier density and optical gain. Our calculations show that doped III-N-V quantum well active layers may have certain benefits to lasers.