SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.18, ss.163-169, 2003 (SCI İndekslerine Giren Dergi)
We investigate the effect of doping on the parameters of transparency carrier density and peak gain of GaInNAs/GaAs quantum well lasers emitting at 1.3 mum and compare the results with that of an equivalent nitrogen-free InGaAs/GaAs structure. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs contrary to nitrogen-free InGaAs/GaAs. The results are analysed using the band-anti-crossing model for band gap, effective mass and simple approximate expressions for carrier density and optical gain. Our calculations show that doped III-N-V quantum well active layers may have certain benefits to lasers.