RADIOENGINEERING, cilt.25, no.3, ss.490-499, 2016 (SCI İndekslerine Giren Dergi)
In this work, an accurate and reliable S- and Noise (N) - parameter black-box models for a microwave transistor are constructed based on the sparse regression using the Support Vector Regression Machine (SVRM) as a nonlinear extrapolator trained by the data measured at the typical bias currents belonging to only a single bias voltage in the middle region of the device operation domain of (V-Ds/V-CE, I-DS/I-C, f) SVRMs are novel learning machines combining the convex optimization theory with the generalization and therefore they guarantee the global minimum and the sparse solution which can be expressed as a continuous function of the input variables using a subset of the training data so called Support Vector (Sits. Thus magnitude and phase of each S- or N- parameter are expressed analytically valid in the wide range of device operation domain in terms of the Characteristic SVs obtained from the substantially reduced measured data. The proposed method is implemented successfully to modeling of the two LNA transistors ATF-551M4 and VMMK 1225 with their large operation domains and the comparative error-metric analysis is given in details with the counterpart method Generalized Regression Neural Network GRNN. It can be concluded that the Characteristic Support Vector based-sparse regression is an accurate and reliable method for the black-box signal and noise modeling of microwave transistors that extrapolates a reduced amount of training data consisting of the S- and N-data measured at the typical bias currents belonging to only a middle bias voltage in the form of continuous functions into the wide operation range.