Akademik Veri Yönetim Sistemi
TURKISH PHYSICAL SOCIETY 40th INTERNATIONAL PHYSICS CONGRESS, Muğla, Türkiye, 2 - 06 Eylül 2024, ss.174
Due to their diversity of band structure, fascinating performances, unique symmetry, two-dimensional (2D) semiconductor materials have attracted much attention and research interest. Their unique and novel properties make them suitable for electronic and optoelectronic applications. TlS is known as a semiconductor with direct band gap, shows good photoconductive properties[1]. However, studies on the band structure of mononlayer TlS is limited and its electronic structure has not been well determined. In this work, structural, electronic and optical properties of undoped and doped monolayer (P-6m2 space group) TlS structure was examined. The mono layer TlS structure is doped with Sn, Pb and Ge atoms and their aforemetined properties was calculated. In the study the substitional and interstital doping was done. DOS and Band gap of all structure was calculated. The undoped one has a direct band gap of 1.13 eV. Substitional type dope introduced additional energy levels in the band gap of the TlS structure. The VASP package was used for all density functional (DFT) calculations[2]. Crystal properties are described by the electron projector augmented wave (PAW) methods with the PBE[3].
[2] Blöchl PE. Phys
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[3]Perdew JP, Burke K,
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