Search for spin gapless semiconductors: The case of inverse Heusler compounds


Skaftouros S., ÖZDOĞAN K. , Sasioglu E., Galanakis I.

APPLIED PHYSICS LETTERS, cilt.102, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 102 Konu: 2
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1063/1.4775599
  • Dergi Adı: APPLIED PHYSICS LETTERS

Özet

We employ ab-initio electronic structure calculations to search for spin gapless semiconductors among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover, these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775599]