Search for spin gapless semiconductors: The case of inverse Heusler compounds

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Skaftouros S., ÖZDOĞAN K., Sasioglu E., Galanakis I.

APPLIED PHYSICS LETTERS, vol.102, no.2, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 102 Issue: 2
  • Publication Date: 2013
  • Doi Number: 10.1063/1.4775599
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Yıldız Technical University Affiliated: Yes


We employ ab-initio electronic structure calculations to search for spin gapless semiconductors among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover, these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications. (C) 2013 American Institute of Physics. []