Search for spin gapless semiconductors: The case of inverse Heusler compounds
APPLIED PHYSICS LETTERS, cilt.102, sa.2, 2013 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 102 Sayı: 2
- Basım Tarihi: 2013
- Doi Numarası: 10.1063/1.4775599
- Dergi Adı: APPLIED PHYSICS LETTERS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Yıldız Teknik Üniversitesi Adresli: Evet
Özet
We employ ab-initio electronic structure calculations to search for spin gapless semiconductors among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover, these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775599]