Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop


Akyol F. , Krishnamoorthy S., Rajan S.

APPLIED PHYSICS LETTERS, cilt.103, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 103 Konu: 8
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1063/1.4819737
  • Dergi Adı: APPLIED PHYSICS LETTERS

Özet

In this work, we demonstrate visible wavelength transparent GaN/GdN/GaN tunnel junction interconnects to cascade multiple p-n junctions with low resistance (5.7 x 10(-4) Omega x cm(2)). We model a device structure using cascaded light emitting diodes (LEDs) with tunnel junction-based carrier regeneration to create high-power LEDs operating at low current density. Experimental LED characteristics are used to model the use of these low resistance tunnel junctions in cascaded multiple active region LEDs that can effectively provide high power by operating under low current and high forward voltage. The adoption of cascaded LED structures can enable high power LEDs while maintaining high efficiency. (C) 2013 AIP Publishing LLC.