Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop

Akyol F., Krishnamoorthy S., Rajan S.

APPLIED PHYSICS LETTERS, cilt.103, sa.8, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 103 Sayı: 8
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1063/1.4819737
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Yıldız Teknik Üniversitesi Adresli: Hayır

Özet

In this work, we demonstrate visible wavelength transparent GaN/GdN/GaN tunnel junction interconnects to cascade multiple p-n junctions with low resistance (5.7 x 10(-4) Omega x cm(2)). We model a device structure using cascaded light emitting diodes (LEDs) with tunnel junction-based carrier regeneration to create high-power LEDs operating at low current density. Experimental LED characteristics are used to model the use of these low resistance tunnel junctions in cascaded multiple active region LEDs that can effectively provide high power by operating under low current and high forward voltage. The adoption of cascaded LED structures can enable high power LEDs while maintaining high efficiency. (C) 2013 AIP Publishing LLC.