Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) in the form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenomena were based on
minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance
measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the
departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves
and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In
resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction
mechanism(s) for minority carriers (electrons).