Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes

Saatci A. E. , Özdemir O. , Kutlu K.

Materials Sciences and Applications, vol.4, pp.794-801, 2013 (Refereed Journals of Other Institutions)

  • Publication Type: Article / Article
  • Volume: 4
  • Publication Date: 2013
  • Doi Number: 10.4236/msa.2013.412101
  • Title of Journal : Materials Sciences and Applications
  • Page Numbers: pp.794-801

Abstract

Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) in the form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons).