Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes

Saatci A. E. , Özdemir O. , Kutlu K.

Materials Sciences and Applications, cilt.4, ss.794-801, 2013 (Diğer Kurumların Hakemli Dergileri)

  • Cilt numarası: 4
  • Basım Tarihi: 2013
  • Doi Numarası: 10.4236/msa.2013.412101
  • Dergi Adı: Materials Sciences and Applications
  • Sayfa Sayıları: ss.794-801

Özet

Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) in the form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons).