Low-resistance GaN tunnel homojunctions with 150 kA/cm(2) current and repeatable negative differential resistance

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Akyol F., Krishnamoorthy S., Zhang Y., Johnson J., Hwang J., Rajan S.

APPLIED PHYSICS LETTERS, vol.108, no.13, 2016 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 108 Issue: 13
  • Publication Date: 2016
  • Doi Number: 10.1063/1.4944998
  • Journal Name: APPLIED PHYSICS LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Yıldız Technical University Affiliated: No

Abstract

We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage similar to 1.6V. Thermionic PN junctions with GaN homojunction tunnel contact to the p-layer exhibited forward current density of 150 kA/cm(2) at 7.6V, with a low series device resistance of 1 x 10(-5) Omega cm(2). (C) 2016 AIP Publishing LLC.