Effect of thermal annealing on the electronic parameters of Al/p-Si/Cu double Schottky barrier heights

Okutan M., Bablich A., Haring Bolivar P.

Physica B: Condensed Matter, vol.657, 2023 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 657
  • Publication Date: 2023
  • Doi Number: 10.1016/j.physb.2022.414566
  • Journal Name: Physica B: Condensed Matter
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: Conductance-capacitance technique, Current-voltage, Double Schottky diode, Interface state density, Ohmic contact
  • Yıldız Technical University Affiliated: No

Abstract

In this work, performance enhancements of a double Schottky rectifier diode with Cu contact on top of p-type Si and a back-side-Al contact due to an optimized thermal annealing process are reported. A decrease of the ideality factor for non-ohmic and ohmic Schottky contacts from 3.17 to 1.15 could be observed in conjunction with a barrier height reduction from 0.59 eV to 0.48 eV by thorough hydrofluoric acid treatment prior to annealing the sample for 15 min. at 450 °C in N2 atmosphere. Moreover, the barrier height and built-in voltage values decreased by increasing frequency in the ohmic contact structure. The results presented in this work demonstrate such ohmic contacts to be potential candidates for high current and low resistance Schottky diodes and applications.