GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions

Akyol F., Krishnamoorthy S., Zhang Y., Rajan S.

APPLIED PHYSICS EXPRESS, vol.8, no.8, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 8 Issue: 8
  • Publication Date: 2015
  • Doi Number: 10.7567/apex.8.082103
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Yıldız Technical University Affiliated: No


We report on the cascading of blue light-emitting diodes (LEDs) up to three junctions using low-resistance InGaN tunnel junctions (TJs). At a forward current density of 10A/cm(2), triple- and dual-junction LEDs operated at 9.09 and 6.07 V with total differential resistances of 6.31 x 10(-2) and 4.16 x 10(-2) Omega cm(2), respectively. A significant increase in output power was observed from the triple-junction LED compared to the dual one, showing that all LED layers contribute to the luminescence output. Enabling high brightness at low current, cascaded LEDs can circumvent efficiency droop mechanism. (C) 2015 The Japan Society of Applied Physics