Measurement of efffective atomic numbers of holmium doped and undoped layered semiconductors via transmission method around the absorption edge

Icelli, Orhan

doi:10.1016/j.nima.2008.12.144

Measurement of efffective atomic numbers of holmium doped and undoped layered semiconductors via transmission method around the absorption edge

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.600, sa.3, ss.635-639, 2009 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 600 Sayı: 3
Basım Tarihi: 2009
Doi Numarası: 10.1016/j.nima.2008.12.144
Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.635-639
Yıldız Teknik Üniversitesi Adresli: Evet

Özet

Effective atomic numbers were measured for InSe and InSe having different Holmium concentrations measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe:Holmium(0.0025), InSe:Holmium(0.0050), InSe:Holmiurn(0.025) InSe:Holmium(0.05) and InSe crystals have been grown by the Bridgman-Stocbarger method. The measured values were compared with the theoretical ones obtained using WinXConn being a Windows version of XCOM on the basis of mixture rule. The objective of this work is to show that there is a relation between effective atomic numbers and doped Ho fractions to InSe. (C) 2009 Elsevier B.V. All rights reserved.