Measurement of efffective atomic numbers of holmium doped and undoped layered semiconductors via transmission method around the absorption edge


Icelli O.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, vol.600, no.3, pp.635-639, 2009 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 600 Issue: 3
  • Publication Date: 2009
  • Doi Number: 10.1016/j.nima.2008.12.144
  • Title of Journal : NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  • Page Numbers: pp.635-639

Abstract

Effective atomic numbers were measured for InSe and InSe having different Holmium concentrations measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe:Holmium(0.0025), InSe:Holmium(0.0050), InSe:Holmiurn(0.025) InSe:Holmium(0.05) and InSe crystals have been grown by the Bridgman-Stocbarger method. The measured values were compared with the theoretical ones obtained using WinXConn being a Windows version of XCOM on the basis of mixture rule. The objective of this work is to show that there is a relation between effective atomic numbers and doped Ho fractions to InSe. (C) 2009 Elsevier B.V. All rights reserved.