Effect of Ni Doping and Film Thickness on Photoelectrochemical Performance of Cu₂O Electrodes


Akgün İ., Dinçer İ.

ICES 2025 (International Conference on Energy Systems) , İstanbul, Turkey, 11 May - 14 November 2025, pp.356-358, (Full Text)

  • Publication Type: Conference Paper / Full Text
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.356-358
  • Yıldız Technical University Affiliated: Yes

Abstract

The growing global energy demand and the adverse environmental effects of fossil fuels require sustainable energy solutions. Hydrogen, as a clean energy carrier, holds significant promise, particularly when produced via renewable sources like solar energy. This study explores the photoelectrochemical (PEC) performance of nickel (Ni)-doped copper(I)oxide (Cu₂O) photocathodes, synthesized via sol-gel. Ni was doped at varying concentrations (0–15%) into Cu₂O thin films, and the effect of doping level and coating thickness on photoactivity was analyzed. Electrochemical characterizations, including open-circuit potential and chronoamperometry under chopped light illumination, revealed that optimal doping levels (5–10%) significantly enhance both photovoltage and photocurrent densities. Moreover, while increased coating layers improved light absorption, an optimum of two layers was identified.