Effect of Ni Doping and Film Thickness on Photoelectrochemical Performance of Cu₂O Electrodes


Akgün İ., Dinçer İ.

ICES 2025 (International Conference on Energy Systems) , İstanbul, Türkiye, 11 Mayıs - 14 Kasım 2025, ss.356-358, (Tam Metin Bildiri)

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.356-358
  • Yıldız Teknik Üniversitesi Adresli: Evet

Özet

The growing global energy demand and the adverse environmental effects of fossil fuels require sustainable energy solutions. Hydrogen, as a clean energy carrier, holds significant promise, particularly when produced via renewable sources like solar energy. This study explores the photoelectrochemical (PEC) performance of nickel (Ni)-doped copper(I)oxide (Cu₂O) photocathodes, synthesized via sol-gel. Ni was doped at varying concentrations (0–15%) into Cu₂O thin films, and the effect of doping level and coating thickness on photoactivity was analyzed. Electrochemical characterizations, including open-circuit potential and chronoamperometry under chopped light illumination, revealed that optimal doping levels (5–10%) significantly enhance both photovoltage and photocurrent densities. Moreover, while increased coating layers improved light absorption, an optimum of two layers was identified.