Low resistance GaN/InGaN/GaN tunnel junctions

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Krishnamoorthy S., Akyol F., Park P. S., Rajan S.

APPLIED PHYSICS LETTERS, vol.102, no.11, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 102 Issue: 11
  • Publication Date: 2013
  • Doi Number: 10.1063/1.4796041
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Yıldız Technical University Affiliated: No


Enhanced interband tunnel injection of holes into a p-n junction is demonstrated using p-GaN/InGaN/n-GaN tunnel junctions with a specific resistivity of 1.2 x 10(-4) Omega cm(2). The design methodology and low-temperature characteristic of these tunnel junctions are discussed, and insertion into a p-n junction device is described. Applications of tunnel junctions in III-nitride optoelectronics devices are explained using energy band diagrams. The lower bandgap and polarization fields reduce tunneling barrier, eliminating the need for ohmic contacts to p-type GaN. This demonstration of efficient tunnel injection of carriers in III-nitrides can lead to a replacement of existing resistive p-type contact material in light emitters with tunneling contact layers requiring very little metal footprint on the surface, resulting in enhanced light extraction. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796041]