Low resistance GaN/InGaN/GaN tunnel junctions

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Krishnamoorthy S., Akyol F., Park P. S., Rajan S.

APPLIED PHYSICS LETTERS, cilt.102, sa.11, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 102 Sayı: 11
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1063/1.4796041
  • Dergi Adı: APPLIED PHYSICS LETTERS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Yıldız Teknik Üniversitesi Adresli: Hayır

Özet

Enhanced interband tunnel injection of holes into a p-n junction is demonstrated using p-GaN/InGaN/n-GaN tunnel junctions with a specific resistivity of 1.2 x 10(-4) Omega cm(2). The design methodology and low-temperature characteristic of these tunnel junctions are discussed, and insertion into a p-n junction device is described. Applications of tunnel junctions in III-nitride optoelectronics devices are explained using energy band diagrams. The lower bandgap and polarization fields reduce tunneling barrier, eliminating the need for ohmic contacts to p-type GaN. This demonstration of efficient tunnel injection of carriers in III-nitrides can lead to a replacement of existing resistive p-type contact material in light emitters with tunneling contact layers requiring very little metal footprint on the surface, resulting in enhanced light extraction. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796041]