Influences of annealing temperature and thickness on ZnS buffer layers for inverted hybrid solar cells

Ongul F., Ulutas U., Yuksel S. A., YEŞİLKAYA S. S., GÜNEŞ S.

SYNTHETIC METALS, cilt.220, ss.1-7, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 220
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.synthmet.2016.05.017
  • Dergi Adı: SYNTHETIC METALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1-7
  • Yıldız Teknik Üniversitesi Adresli: Evet

Özet

In this study, the photovoltaic performances of inverted type hybrid solar cells fabricated using zinc sulfide (ZnS) as a buffer layer and blend of P3HT(poly(3-hexyl)thiophene), PCBM([6,6]-phenylC61 butyric acidmethylester) as a photoactive layer were reported. ZnS thin films were prepared by spray pyrolysis method at fixed substrate temperature. The effects of annealing under ambient conditions at different temperatures on the optical and structure properties of ZnS films were investigated. When the annealing temperatures of ZnS films were increased from 200 to 500 degrees C, the power conversion efficiency of the inverted type hybrid solar cells was significantly enhanced by improving crystallite and morphology of buffer layer. The effect of ZnS film thickness on photovoltaic parameters of the inverted devices was also investigated. (C) 2016 Elsevier B.V. All rights reserved.