High-mobility n-channel organic field-effect transistors based on epitaxially grown C-60 films

Singh, TB; Marjanovic, Nenad; Matt, Gebhard; GÜNEŞ, Serap; Sariciftci, Niyazi; Ramil, Alberto; Andreev, Andrei; Sitter, Helmut; Schwodiauer, R; Bauer, Sigfried

doi:10.1016/j.orgel.2005.03.006

High-mobility n-channel organic field-effect transistors based on epitaxially grown C-60 films

Singh T., Marjanovic N., Matt G., GÜNEŞ S., Sariciftci N. S., Ramil A., ...Daha Fazla

ORGANIC ELECTRONICS, cilt.6, sa.3, ss.105-110, 2005 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 6 Sayı: 3
Basım Tarihi: 2005
Doi Numarası: 10.1016/j.orgel.2005.03.006
Dergi Adı: ORGANIC ELECTRONICS
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.105-110
Yıldız Teknik Üniversitesi Adresli: Evet

Özet

We present C-60-based n-channel organic field-effect transistors with mobility in the range of 0.4-1 cm(2) V-1 s(-1). A solution-processed organic dielectric divinyltetramethyldisiloxane-bis(benzoeyelobutene) (BCB) was used as a gate dielectric and C-60 films were grown on top by hot wall epitaxy. Devices characterised in inert atmosphere conditions show high stability with an on/off ratio >10(4). The determined mobility values are nearly gate voltage independent. (C) 2005 Elsevier B.V. All rights reserved.