We present C-60-based n-channel organic field-effect transistors with mobility in the range of 0.4-1 cm(2) V-1 s(-1). A solution-processed organic dielectric divinyltetramethyldisiloxane-bis(benzoeyelobutene) (BCB) was used as a gate dielectric and C-60 films were grown on top by hot wall epitaxy. Devices characterised in inert atmosphere conditions show high stability with an on/off ratio >10(4). The determined mobility values are nearly gate voltage independent. (C) 2005 Elsevier B.V. All rights reserved.