High-mobility n-channel organic field-effect transistors based on epitaxially grown C-60 films


Singh T., Marjanovic N., Matt G., GÜNEŞ S. , Sariciftci N. S. , Ramil A., et al.

ORGANIC ELECTRONICS, cilt.6, ss.105-110, 2005 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 6 Konu: 3
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.orgel.2005.03.006
  • Dergi Adı: ORGANIC ELECTRONICS
  • Sayfa Sayısı: ss.105-110

Özet

We present C-60-based n-channel organic field-effect transistors with mobility in the range of 0.4-1 cm(2) V-1 s(-1). A solution-processed organic dielectric divinyltetramethyldisiloxane-bis(benzoeyelobutene) (BCB) was used as a gate dielectric and C-60 films were grown on top by hot wall epitaxy. Devices characterised in inert atmosphere conditions show high stability with an on/off ratio >10(4). The determined mobility values are nearly gate voltage independent. (C) 2005 Elsevier B.V. All rights reserved.