High-mobility n-channel organic field-effect transistors based on epitaxially grown C-60 films


Singh T., Marjanovic N., Matt G., GÜNEŞ S. , Sariciftci N. S. , Ramil A., ...More

ORGANIC ELECTRONICS, vol.6, no.3, pp.105-110, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 6 Issue: 3
  • Publication Date: 2005
  • Doi Number: 10.1016/j.orgel.2005.03.006
  • Title of Journal : ORGANIC ELECTRONICS
  • Page Numbers: pp.105-110

Abstract

We present C-60-based n-channel organic field-effect transistors with mobility in the range of 0.4-1 cm(2) V-1 s(-1). A solution-processed organic dielectric divinyltetramethyldisiloxane-bis(benzoeyelobutene) (BCB) was used as a gate dielectric and C-60 films were grown on top by hot wall epitaxy. Devices characterised in inert atmosphere conditions show high stability with an on/off ratio >10(4). The determined mobility values are nearly gate voltage independent. (C) 2005 Elsevier B.V. All rights reserved.