High-mobility n-channel organic field-effect transistors based on epitaxially grown C-60 films

Singh T., Marjanovic N., Matt G., GÜNEŞ S., Sariciftci N. S., Ramil A., ...Daha Fazla

ORGANIC ELECTRONICS, cilt.6, sa.3, ss.105-110, 2005 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 6 Sayı: 3
  • Basım Tarihi: 2005
  • Doi Numarası: 10.1016/j.orgel.2005.03.006
  • Dergi Adı: ORGANIC ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.105-110
  • Yıldız Teknik Üniversitesi Adresli: Evet

Özet

We present C-60-based n-channel organic field-effect transistors with mobility in the range of 0.4-1 cm(2) V-1 s(-1). A solution-processed organic dielectric divinyltetramethyldisiloxane-bis(benzoeyelobutene) (BCB) was used as a gate dielectric and C-60 films were grown on top by hot wall epitaxy. Devices characterised in inert atmosphere conditions show high stability with an on/off ratio >10(4). The determined mobility values are nearly gate voltage independent. (C) 2005 Elsevier B.V. All rights reserved.