Anomalous Capacitance Behavior of Sol-Gel Deposited V2O5 Film on Crystalline Silicon

BULGURCUOĞLU A. E., GOKDEMIR F. P., ÖZDEMİR O., Kutlu K.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, vol.12, no.2, pp.146-151, 2017 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 12 Issue: 2
  • Publication Date: 2017
  • Doi Number: 10.1166/jno.2017.1980
  • Journal Name: JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.146-151
  • Keywords: V2O5, Sol-Gel, SIS, Admittance, Negative Capacitance, FTIR, VANADIUM PENTOXIDE, THIN-FILMS, OPTICAL-PROPERTIES, CELLS, PHOTOOXIDATION, CONDUCTION, TRANSPORT, DEVICES
  • Yıldız Technical University Affiliated: Yes

Abstract

Sol-gel produced vanadium pentoxide (V2O5) thin film was grown over differently doped crystalline silicon (p/n c-Si) substrates and electrical characteristics were investigated through current-voltage (I-V) and capacitance-voltage (C-V) measurements within dark and light ambient. For the film over p-c-Si, capacitance behavior was explained in terms of semiconductor (V2O5)/native oxide (SiO2)/semiconductor (p-c-Si) [SIS] structure in which existence of SiO2 insulator film was verified through infrared (IR) measurement. For the film over n-c-Si, negative capacitance or inductance phenomenon, corresponded to space charge limited current regime in I-V analysis, was observed and the derived admittance expression for such issue was successfully applied for the present structure.