Theoretical study of material parameters of InGaNP/GaP quantum structures

Oduncuoglu M., Babaoglu M.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.3, sa.3, ss.166-170, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 3 Sayı: 3
  • Basım Tarihi: 2009
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.166-170
  • Yıldız Teknik Üniversitesi Adresli: Hayır

Özet

This paper presents the theoretical calculations of the electronic properties of InxGa1-xNyP1-y quantum wells on GaP substrates which are expected to be advantageous for quantum well based light emitting diodes in visible range. We theoretically calculate the bandgap, the band offset, and effective mass of novel direct bandgap InGaNP/GaP structures to determine transition energies. Our calculations show that the incorporation of nitrogen into InxGa1-xP improves the band alignment. The band offsets and transition energies of InGaNP/GaP heterostructures are investigated for different indium (x) concentrations.